Erratum to: “Magnetic-field-induced nonparabolicity of exciton dispersion in semiconductors with a nondegenerate valence band”
نویسندگان
چکیده
منابع مشابه
Band-edge exciton in quantum dots of semiconductors with a degenerate valence band: Dark and bright exciton states.
We present a theoretical analysis of the band-edge exciton structure in nanometer-size crystallites of direct semiconductors with a cubic lattice structure or a hexagonal lattice structure which can be described within the framework of a quasicubic model. The lowest energy exciton, eightfold degenerate in spherically symmetric dots, is split into five levels by the crystal shape asymmetry, the ...
متن کاملDispersion of nondegenerate nonlinear refraction in semiconductors.
We use our recently developed beam-deflection technique to measure the dispersion of the nondegenerate nonlinear refraction (NLR) of direct-gap semiconductors. The magnitude and sign of the NLR coefficient n2(ωa; ωb) are determined over a broad spectral range for different values of nondegeneracy. In the extremely nondegenerate case, n2(ωa; ωb) is positively enhanced near ...
متن کاملCrossover from impurity to valence band in diluted magnetic semiconductors: Role of Coulomb attraction by acceptors
F. Popescu,1,* C. Şen,1,2 E. Dagotto,3,4 and A. Moreo3,4 1Department of Physics, Florida State University, Tallahassee, Florida 32306, USA 2National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA 3Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA 4Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Ten...
متن کاملInter-valence-band hole-hole scattering in cubic semiconductors
Transitions between valence subbands resulting from hole-hole scattering in cubic semiconductors have been analyzed in the frame of Coulomb interaction of valence electrons in the Luttinger-Kohn representation. Expressions for transition rates are derived. Calculated rates for transitions between lightand heavy-hole bands are presented for germanium. Hole-hole scattering has remarkably differen...
متن کاملErratum: Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2
Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesi...
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ژورنال
عنوان ژورنال: Journal of Experimental and Theoretical Physics
سال: 2015
ISSN: 1063-7761,1090-6509
DOI: 10.1134/s106377611502020x